The Effect of Etching Time On Structural Properties of Porous Quaternary AlInGaN Thin Films

Using photo electrochemical etching technique (PEC), porous silicon (PS) layers were produced on n-type (Si) wafers to generate for with an orientation of (111) The results time investigated at: (5,10,15 min). X-ray diffraction experiments revealed differences between the surface sample sheet and synthesized silicon. largest crystal size is (30 nm) lowest (28.6 analysis Atomic Force Microscopy (AFM) Field Emission Scanning Electron Microscope (FESEM) used research morphology layer. As increased, AFM findings showed that root mean square (RMS) roughness grain decreased FESEM a homogeneous pattern verified formation uniform